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This paper presents different experimental methods for measuring parasitic capacitances and inductances of direct copper bond (DBC) based power semiconductor modules. The found parasitics are compared with finite element simulations to evaluate their accuracy. A very good match of the simulated and measured stray capacitances is found. The parasitics, which are found via simulations and experiments,...
The study proposes the primary design and transient analysis of an IGBT non-destructive tester. The tester is designed to test IGBTs at voltage and current ratings less than 3.3kV 2.4kA. Due to stray elements, the circuit might oscillate during the different modes of operation and test conditions. These oscillations could cause high stresses to the IGBT switches in the circuit and cause one or more...
During Short-Circuit (SC) operations, strong current oscillations of IGBTs can appear. Simulation studies also confirm this. No parasitic inductances are required for such oscillations. A simplified equivalent circuit of the device, which is basically an RC oscillator, is able to reproduce the oscillations. The occurrence of oscillations depends on the model parameters, which can be related to the...
This paper presents fast and simple methods to calculate IGBT and diode switching and conduction losses in power electronic system simulation. With the models derived in this paper, these losses can be calculated although the device data is incomplete. A novel approach to calculate diode reverse recovery losses is included. Furthermore, the correlation between stray inductance and switching energy...
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