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In this paper, a compact triplexer is proposed by cascading three tilted multimode interference couplers for FTTH applications. AH components based on silicon rib waveguides. Firstly, a MMI coupler is designed to separate the 1310 nm wavelength band by using pseudo self-imaging technique. A tiled MMI coupler is then cascaded to separate the 1490 nm and 1550 nm wavelength bands. Numerical simulations...
We address recent progress in large-area precise nanofabrication of metasurfaces using UV nanoimprint lithography. Metasurfaces for enhancing optical signals in molecules and for manipulating polarization of light are introduced.
We demonstrate 30 GHz mode-locked quantum well lasers on silicon using continuous-wave optical injection, which emit at the L-band wavelength with integrated root-mean-square time jitter of 1.0 ps and radio-frequency-linewidth of 150 kHz.
Polarimetric Imaging is an emerging technique that uses polarized light to probe the physical and physiological properties of tissues. Polarization Ellipsometric techniques are utilized to understand the variation of polarization properties of light through sample tissue. The obtained optical signature matrix helps clinicians understand and assess the tissue properties and provide knowledge about...
We developed an adhesive bonding process to integrate silicon nanomembranes onto silicon chips. A grating-coupled 1-to-32 H-tree optical distribution is experimentally demonstrated with an excess loss of 2.2 dB and a uniformity of 0.72 dB.
We measure near-field distributions of Mie-type optical modes of silicon nanodisks using apertureless near-field optical microscopy. Excellent agreement with numerical predictions is obtained, further enabling multipole analysis of the observed modes.
Silicon-process compatible metasurface was designed and tested in the infrared wavelength range. These metasurfaces show very high Q (>100), extreme chirality, and polarization conversion along with very low-loss operation. They show promise for sensing applications as well as spectrally selective CP thermal emitters.
We present terahertz carrier dynamics in individual silicon nanowires by ultrafast optical-pump and terahertz-probe spectroscopy. Density-dependent study reveals that the surface traps play a major role in the carrier dynamics, in which the conductivity changes with the terahertz polarization parallel to nanowire axis are extracted.
We experimentally study spot size reduction by using radially polarized beam for subsurface silicon integrated circuit microscopy. Metallic lines fabricated on a silicon substrate with linewidth / spacing ∼ 130nm / 70nm were resolved through the substrate at λ0 = 1310nm.
In this paper, we demonstrate gate-all-around (GAA) single crystalline nanowires (SiNWs) that are fabricated using top-down standard CMOS front-end processes. The GAA silicon nanowires are fabricated in well-defined locations with high-quality electrical contacts, and controlled geometry and alignment. These SiNW FETs fabricated in this process have demonstrated repeatable electrical performance with...
Various photonic devices covering passive to active functions have been developed and monolithically-integrated on a silicon wire waveguide platform. Obstacles to practical applications are being eliminated by applying state-of-art fabrication technologies and unique device designs.
A new thermal imaging method that senses the change in Si index of refraction as a function of temperature to visualize temperature distributions of LSI circuits is described. The resolution is not limited by the heat radiation wavelength but by the sensing light source, which is usually around 1μm. The method further extends the application into the areas that require both high spatial and temporal...
A transverse-magnetic-pass (TM-pass) copper (Cu) polarizer is proposed and analyzed using the previously published two-dimensional Method-of-Lines beam-propagation model. The proposed polarizer exhibits a simulated high-pass filter characteristics, with TM0 and TE0 mode transmissivity of >;70% and <;5%, respectively, in the wavelength regime of 1.2-1.6 μm. The polarization extinction ratio (PER)...
We demonstrate a lateral spatial resolution of 160 nm (lambda0/8) using apodization in subsurface backside microscopy of silicon integrated circuits - a record resolution for one-photon excitation schemes.
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