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A rate-equation model, in which three discrete quantum-dot (QD) energy levels are assumed and all possible relaxation paths and carrier transport in the GaAs barrier are considered, is presented to analyze the steady-state performance of 1.3 mum undoped and doped dots-under-a-well (DUW) and dots-in-a-well (DWELL) InAs-GaAs QD lasers. DWELL QD lasers have higher saturation value of QD level occupation...
This work reports the long-wavelength lasing of self-assembled InAs quantum dot lasers with AlGaAs cladding layer grown by MOCVD. By growing Al/sub 0.4/Ga/sub 0.6/As upper cladding layer at low temperature, the effect of post-growth annealing of InAs QDs is suppressed and 1.28 /spl mu/m cw lasing at room temperature of stacked InAs/GaAs QD lasers is achieved.
Summary form only given. The optical response of self-assembled quantum dots (SAQDs) has been an area of extensive research in recent years, driven both by an interest in the basic physics of these strongly confined systems, and by the possibility of practical applications for such structures. There have been several studies of carrier relaxation in these systems, including differential transmission,...
Summary form only given. Growth of GaN-based self-assembled quantum dots (QDs) has received great attention for application to blue light emitting lasers. Lasing action from a photo-excited InGaN QD laser at room temperature was recently reported. To confirm the effect of quantum-mechanically localized states in the QDs, discrete energy levels should be evidenced. However, there has been no report...
Summary form only given. The homogeneous linewidth of excitonic transitions is a parameter of fundamental physical importance. In self-assembled quantum dot systems, a strong inhomogeneous broadening due to dot size fluctuations masks the homogeneous linewidth associated with transitions between individual states. The homogeneous and inhomogeneous broadening of InGaAs quantum dot luminescence is of...
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