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Self-assembled quantum dots (QDs) with broadband emitting spectra, QD superluminescent diodes (SLDs) and external cavity tunable QD laser have been studied. By optimizing growth parameters and sample structure of InAs QDs, up to 150-nm photoluminescence width is achieved. High-power InAs/GaAs QD-SLDs with the CW output power of 200 mW and the spectral bandwidth of near 60 nm have been obtained at...
The theoretical calculation of the electronic structure of any constituent materials is the first step toward the interpretation and understanding of experimental data and reliable device design. This is essentially true for nanoscale devices where both the atomistic granularity of the underlying materials and the quantum-mechanical nature of charge carriers play critical roles in determining the...
When the n=1 (ground) state of quantum dots is resonantly pumped, a "non-degenerate" biexciton composed of an n=1 and n=2 (excited) states-pair may be observed with pump-probe spectroscopy. We observed this resonance and measured 15-meV binding energy in In0.4Ga 0.6As self-organized quantum dots, consistent with theoretical calculations
InAs/GaAs quantum dots (QDs) were grown by low pressure metal-organic chemical vapour deposition in the Stranski-Krastanow growth mode. We describe the influence of growth parameters such as coverage, the V/III ratio, growth temperature and growth interrupts on the QD nucleation and the importance of avoiding formation of larger islands which are particularly susceptible to dislocations. After an...
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