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We compared to the characteristics of fabricated AlGaN/GaN HEMTs on a Si substrate with conventional ohmic contact and improved ohmic contact. In conventional ohmic contact with metal scheme of Ti/Al/Ni/Au or Ti/Al/Ti/Au, generally ohmic contact resistance is good but, surface topography has bad morphology due to ball-up by low Al melting point at high temperature RTA over 800°C. In order to improve...
The first demonstration of high-Al-composition (> 70%) AlGaN high electron mobility transistors (HEMTs) is reported. High electron mobility (~1300 cm2/Vs at room temperature) was achieved in novel high-Al-composition AlGaN 2-D electron gas structures. The threshold voltages (Vth) of Al0.72Ga0.28N/AlN/GaN HEMTs were shifted from -1.0 to -0.13 V by employing different gate metal stacks, Al/Au and...
The normally-off AlGaN/GaN HFETs on Si substrate were fabricated. To realize normally-off characteristic, recess was formed under the gate electrode and NiOx was formed as a gate electrode. As a result, the fabricated AlGaN/GaN HFET with a gate width of 157 mm exhibited a threshold voltage of +0.8 V, a breakdown voltage of more than 800 V, an on-resistance of 72 mOmega, and a maximum drain current...
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