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The piezoelectric stress distribution induced in the GaN layer of AlGaN/GaN Schottky Barrier Diodes (SBDs) under a DC reverse voltage of −250 V is directly measured using micro-Raman spectroscopy. The highest piezoelectric stress measurable near the anode fieldplate edge is 380 ± 40 MPa, which is similar to the stress measured in an AlGaN/GaN SBD under reverse-bias cycling at −400 V in a high voltage...
The relationship between an electrical breakdown and a space charge accumulation in low-density polyethylene (LDPE) and cross-linked polyethylene (XLPE) was investigated under high dc stress using the pulsed electro-acoustic (PEA) measurement system with a circuit for an external current measurement. It has been found that the space charge accumulation strongly affects the breakdown characteristics...
The in-situ measurement of the stress evolution at the anode and cathode interfaces of the Cu/3.0Ag0.5Cu/Cu solder joints with current density of 4 × 103A/cm2 at room temperature by X-ray diffraction technique was investigated. The experimental results showed that the stress evolution at the interfaces was a very complicated process during current stressing, which owed to many influencing factors...
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