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We fabricated counter-doped ring resonator modulators that guarantee the absence of unexpected p-i-n junctions in the ring waveguide due to overlay misalignments inherent to successive lithographic steps. Fabricated ring resonator modulators showed good efficiency (VπL at 1.55 V.cm at −1V) and transmission at 10 Gb.s−1.
A novel 25 Gb/s ring-based PAM-4 modulator in silicon-on-insulator is presented. The reverse biased modulator is driven by two independent 3 Vp−p electrical signals at 12.5 Gb/s. It has a footprint of 0.48 mm2.
We present DWDM nanophotonics architectures based on microring resonator modulators and detectors. We focus on two implementations: an on chip interconnect for multicore processor (Corona) and a network that uses high-radix switches (HyperX). Based on the requirements of these applications we discuss the key constraints on the photonic circuits' devices and fabrication techniques as well as strategies...
Copper interconnect is unlikely to be the ultimate solution to support the growing functionalities of next generation microprocessor due to its information latency and power consumption. Converging EPIC on a single chip platform to enable functional diversification emerges as one promising approach to be realized by taking the advantage of low energy and huge data capacity of optical interconnects...
High-bandwidth interchip optical interconnect architectures have the potential to address increasing input-output bandwidth demands. This brief compares several optical interconnect architectures on the basis of power efficiency in 90- and 45-nm CMOS technologies. Under consideration are a near-term architecture consisting of discrete vertical-cavity surface-emitting lasers (VCSELs) with p-i-n photodetectors...
We demonstrate a high-speed integrated optical link on a silicon chip using low-power silicon microresonator electro-optic modulators and low-capacitance germanium photodetectors. Integrating compact devices to provide multiple functions is essential for building scalable optical interconnects.
The optical modulation of Si ring resonator by applying electric-field was, for the first time, achieved although carrier injection type modulations were reported. The 33% optical modulation was realized at applied voltage of 200 V.
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