The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We present a 10-Gb/s, 1×4 optical link based on a DRAM-integration-ready bulk-silicon modulator for multi-drop CPU-DRAM interconnects. The bulk-silicon modulator operated at 10 Gb/s on a die, and at 5 Gb/s in a QFP package. The 1×4 optical link was limited not by signal integrity but by optical power budget, demonstrating its scalable capacity for the future multi-drop memory bus.
We present 10Gb/s silicon Mach-Zehnder modulators fabricated on a bulk silicon wafer. 10 Gb/s data transmission with extinction ratio of >;9 dB at de-emphasis level of 12 dB is successfully demonstrated.
We demonstrate 50 Gbit/s modulation using four silicon microring modulators within a footprint of 500 mum2. This is the highest total modulation capacity shown in silicon using compact micro-ring modulators.
Electroabsorption spectra were measured for GaInNAs and GaInNAsSb quantum wells around 1300 and 1550 nm, respectively, for use in modulators for telecommunication and optical interconnects. Fine structure of band edge transitions were further studied with photoluminescence and electroreflectance.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.