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This paper presents a lumped and distributed element models for dual-band (f1/f2) with harmonic suppression (HS) ±90° unit module. At first, the lumped and distributed element models for the dual-band (2.45/5.2-GHz) unit module are constructed. Then, the scattering parameter responses of the unit models are simulated and compared by using general microwave circuit software, such as Agilent ADS™ etc...
This paper presents a sub-circuit-based method to model the passive distribution network (PDN) using measured S-parameters. In general modeling method the PDN models have to be transformed into electric networks consists of resistor, inductor and capacitor components. These modeling processes generally take much time and need repeated adjustments. The sub-circuit-based modeling method converts the...
Faced with the challenges of increasing operational frequencies and switching rates of modern electronics devices used in electrical systems, there is an extensive need for high frequency models (up to a few gigahertz) for electrical components like bandpass filters, couplers and power distributors. This paper presents the application of partial element equivalent circuit (PEEC) theory for the creation...
This paper outlines a non-linear measurement approach suitable for wafer mapping and technology screening applications. It is shown how rapid characterization and uniformity investigations of non-linear devices is possible through the development of an intelligence driven, open-loop active harmonic load pull measurement system, where localized behavioral models are exploited to dramatically improve...
Electrostatic discharge protection is a must in every integrated circuit. At microwave frequencies, the influence the protection devices have over the circuit they protect can significantly impact the functioning of the latter. A model for the SCR (silicon controlled rectifier - one of the most efficient ESD protection devices) and the ESD protection diode was developed. Its purpose is to estimate...
This paper describes one of the critical technologies of very high speed integrated circuits (VHSICs), the equivalent circuit model of the GaAs substrate based coupled microstrip lines. We present a method that extracts a frequency-dependent tabular RLGC model from mixed-mode S-parameters estimated by EM simulation (software HFSS). This paper shows that the using a conventional modal decomposition...
A 20-GHz low noise amplifier (LNA) is designed in 0.13µm CMOS technology. The proposed amplifier employs two cascade stages to achieve a peak power-gain of 25 dB and a noise figure of 4.8 dB at 20.4 GHz. The power consumption of the LNA circuit is 12.2 mW from a 1.5V supply. This paper also presents a novel model for sub-nH planar spiral inductors, which accounts for high-frequency effects and incorporates...
Silicon-controlled rectifier (SCR) has been reported with the good electrostatic discharge (ESD) robustness under the lower parasitic capacitance among ESD devices in CMOS technology. To correctly predict the performances of SCR-based ESD-protected RF circuit, it is essential for RF circuit design with accurate model of SCR device. The small-signal model of SCR in RF frequency band is proposed in...
Accurate channel simulations of package interconnections require passive and causal models that faithfully represent the full frequency response from tens of gigahertz to DC. In this paper, we propose and test a method to create accurate models extending to DC while retaining passivity and causality. The model derived by this method is suitable for transient simulations of packaging interconnect systems.
Accurate assessment of crosstalk problems in cable harnesses requires simulation methods that account for statistical variation in harness parameters. Use of the T-parameter method to rapidly estimate the statistical variation of crosstalk in cable harness bundles is outlined. Crosstalk is calculated by segmenting the harness into a cascade of equal length multi-conductor transmission lines (MTLs)...
This paper describes a millimeter wave quadrature down-converter module based on the interferometric principle. The computer model of the six-port interferometer is implemented using S-parameter measurements of a 90° hybrid coupler fabricated on thin alumina substrate. This model is validated by full two-port measurements of the six-port. Down-converter error vector modulation results are analyzed...
A new approach to parameter extraction for on-chip symmetric transformers based on measured four-port S-parameters is proposed. Based on circuit analysis, open-loaded and short-loaded Y parameters are first used to derive the coupling parameters and all the other model parameters are derived from the corresponding analytical equations. As verified by a set of transformers fabricated on a standard...
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