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A method for the noninvasive measurement of silicon wafer temperature based on infrared transmission is presented. The method is well suited to the 400-800°C temperature range, can be used through thick quartz walls, and is compatible with rapid thermal processing and epitaxial growth. The approach relies on the decreased bandgap, higher phonon population, and increased free carrier concentrations...
Heterojunction p-n-p transistors with SiGe bases have been fabricated. Molecular beam epitaxy (MBE) was used to deposit both Si and SiGe bases, and the emitter was formed by low-temperature epitaxy. The base thickness of the SiGe-base transistor, as measured by secondary ion mass spectrometry, is less than 70 nm. The current gain of the SiGe-base device is 20 at room temperature and increases with...
The growth and doping of Si and SiGe layers on Si substrates were investigated by molecular beam epitaxy (Si-MBE). Growth took place at temperatures below the standard Si-MBE process regime (<550 degrees C). The lowest epitaxial temperature achieved was 140 degrees C. Results on matrix growth, metastability of strained-layer SiGe, and doping are given, and the structure and characteristics of two...
The first operational BICFET (bipolar-inversion-channel field-effect transistor) structures based on the Ge/sub x/Si/sub 1-x//Si system have been demonstrated. The 300 K current gains of beta >300 are believed to be the highest values reported for a BICFET in any material system to date. The device structure, fabrication, and electrical performance are presented. It is concluded that due to its...
Si/SiGe heterostructure bipolar transistors (HBT) were fabricated and compared to Si homojunction transistors with the same doping levels. Low-temperature Si-MBE was used to form the heterojunction and the homojunction layer sequences. One HBT structure has a graded-gap base layer, where the Ge fraction is 20% at the emitter side and linearly graded to 0% toward the collector side. This gives an average...
A monolithic process to co-integrate Si and GaAs circuits on a single chip is described. The co-integration has been realized through the epitaxial growth of a GaAs layer on a prefabricated Si wafer, resulting in a coplanar structure appropriate for IC processing. A composite ring oscillator consisting of Si CMOS and GaAs MESFET inverters connected in a ring was fabricated as a demonstration.<<ETX>>
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