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Tetrakis (diethylamino) hafnium (TDEAH), tetrakis (diethylamino) titanium (TDEAT) and H2O were used for the atomic layer deposition of HfO2 and TiO2 films on silicon substrates. X-ray Photoelectron Spectroscopy showed that after a short Ar+ sputtering for removing surface contaminants, both HfO2 and TiO2 films were found to be essentially carbon free. While HfO2 remained at +4 chemical state after...
In this paper, we describe an electrolyte-insulator-semiconductor (EIS) device prepared from Tm2O3 sensing membranes deposited on Si (100) substrates through reactive sputtering. X-ray diffraction, X-ray photoelectron spectroscopy, and atomic-force microscopy were used to study the chemical and morphological features of these films as functions of the growth conditions (argon-to-oxygen flow ratios...
The thermal stability and phase characteristics for the Ni-FUSI formed on SiO2 gate dielectrics by a novel integration process were investigated. The electrical resistivity and surface morphology of Ni/Si layers at varies of annealing temperatures were examined by X-ray diffraction (XRD), sheet resistance, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The structure of...
The properties of the ruthenium (Ru)/ TaN as copper diffusion barrier in copper low dielectric constant material(low-k) metallization were studied by sheet resistance, X-ray diffraction (XRD), X-ray photoelectron spectroscopy(XPS), transmission electron microscopy (TEM) and electrical current leakage-voltage tests. Cu, Ru and TaN thin films were deposited by ion beam sputtering technique. Sheet resistance...
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