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An 80 V-class high voltage (HV) MOS platform integrating two types of 80 V-class novel structure devices, a high-side capable 30 V-gate-voltage drift-NMOSFET and an ESD protection BJT, is described. The 30 V-gate-voltage drift NMOSFET features a stacked source-side structure consisting of LOCOS, an extended source region, and a waved p+ stopper, enabling both off-state and on-state drain breakdown...
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