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The work presented here shows the effect of annealing temperature on CuI thin films. The 0.05 mol of CuI solution is prepared at room temperature and then deposited in silicon and glass substrate. The CuI thin films were deposited using sol-gel spin coating method. The electrical, optical properties and surface morphology was characterized by current-voltage (I-V) measurement, ultraviolet-visible...
Cuprous oxide (Cu2O), a direct band gap semiconductor with energy band gap about 2.0eV, has been regarded as one of the most promising materials for application in photovoltaic cells. Nanocrystalline cuprous oxide thin films has been deposited on glass and Si substrates by dc reactive magnetron sputtering method. The effect of substrate temperature and dc power on the nanocrystalline cuprous oxide...
Zinc selenide (ZnSe)/copper-phthalocyanine (CuPc) hybrid thin films were prepared by electron beam evaporator on glass substrate from %weight mixed of ZnSe:CuPc powders. The film thickness was 500 nm. The substrate temperatures were varied at room temperature to 150degC. X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) were used to characterize the crystalline structure...
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