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Novel forms of nonvolatile memory, such as phase-change memory (PCM), promise low latency and small granularity of read and write access at high storage density. They also feature very high endurance. These characteristics make them highly desirable for emerging high-capacity (hybrid) memory applications such as in-memory databases and in-memory processing. In this work, we present the architecture,...
Accurate characterization of real device samples is essential for understanding the true potential of the emerging non-volatile memories (NVMs) and identifying their optimal placement in the memory hierarchy. Even though, NVM devices are now available from different manufacturers, lack of an appropriate NVM controller and evaluation platform in the public domain is the main challenge in extracting...
Reconfigurable computing platforms enable rapid prototyping of arbitrary logic, but purely spatial fabrics suffer from issues with scalability and power consumption. Novel reconfigurable frameworks are being developed which similarly allow arbitrary function mapping, but do so with a mixture of spatial and temporal computing, improving scalability and energy efficiency over purely spatial fabrics...
A new FPGA design using nonvolatile configuration memory (NCM) has been presented. NCM with large On/Off resistance ratio, such as nanoionic memory, is adopted to replace SRAM-based configuration memory. Since NCM is fabricated between interconnect layers of CMOS, silicon area is smaller than in the case of SRAM. Unlike previous FPGAs with nonvolatile programmable wires, we took architecture based...
Field programmable gate arrays (FPGAs) are getting more and more attractive for military and aerospace applications, among others devices. The usage of non volatile FPGAs, like Flash-based ones, reduces permanent radiation effects but transient faults are still a concern. In this paper we propose a new methodology for effectively measuring the width of radiation-induced transient faults thus allowing...
Single, high energy, high LET, ions impacting on a Floating gate array at grazing or near-grazing angles lead to the creation of long traces of FGs with corrupted information. Every time a FG is crossed by a single ion, it experiences a charge loss which permanently degrades the stored information. If the ion crosses more than one FG, the threshold voltage of all those FGs interested by its track...
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