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The use of a vertical thin film transistor (VTFT) topology in the flat panel active matrix array, opens up a plethora of new high performance applications. The VTFT is small in footprint by virtue of its stacked layer configuration, in which channel lengths can be conveniently scaled down to nanometer regime without having to resort to photolithography as would otherwise be needed when scaling lateral...
In this paper, we report the influence of RF power on carbon- and nitride-doped silicon oxide (SiCON) films deposited by PECVD using SiH4, N2O and C2F6 precursors. The deposited films are characterized by means of FTIR and XPS, revealing the coexistence of both ring and network frameworks as well as Si-C, Si-N, C-N, C-H and Si-O bonds. The dielectric constant (k) and deposition rate of the SiCON film...
We investigated to decrease the leakage current of SiNx film by employing a N/sub 2/ plasma treatment. The insulating layers were prepared by two step process; the N/sub 2/ plasma treatment and then PECVD SiNx deposition with SiH/sub 4/ and N/sub 2/ gases. To prove the influence of the N/sub 2/ plasma treatment, the Si substrate was exposed to the plasma, which was generated in N/sub 2/ gas ambient...
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