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Power semiconductor device technology needs highly efficient heat dissipation system having a chip bonding layer with high thermal conductance and reliability. This work clarifies 3D thermal stress profiles under power cycling test (PCT) and thermal cycling test (TCT) with multi-physics solver for the system having Ag sintered bonding layer as a new chip attachment technology. Both reliability test...
A NFE model is constructed to analyze the heating steady thermal stress in a ZrO2/FGM/Ti-6Al-4V composite ECBF plate considered temperature dependency. From numerical calculation, when T0 = 300 K Ta = 670 and Tb = 1 070 K, the stress distributions in the plate were obtained. The results are as follows. The change of the FGM layer thickness is little effect on the stress in metal layer. Compared with...
ldquoDevelopment for advanced thermoelectric conversion systemsrdquo supported by the new energy and industrial technology development organization (NEDO) has been successfully completed as one of the Japanese national energy conservation projects. Three types of the cascaded thermoelectric modules operating up to 850 K in high electrode temperature and two types of Bi-Te thermoelectric modules operating...
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