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We have analyzed 3D thermal stress profile under TCT using multi-physics solver for SiC power device heat dissipation structures with a direct chip bonding on Cu plate by Ag sintered layer. The results showed that the maximum stress value in SiC chip structure is higher than that in Si chip structure. This is because Young's modulus of SiC is higher than that of Si. The maximum stress point is at...
Power semiconductor devices and modules need highly efficient heat dissipation system having a chip bonding layer with high thermal conductance and reliability. Ag sintering chip-attachment has several advantages for heat dissipation. This work clarifies the thermal stress profiles under thermal cycling test by 3D multi-physics solver for double-side and single-side direct bonding structures with...
Power semiconductor device technology needs highly efficient heat dissipation system having a chip bonding layer with high thermal conductance and reliability. This work clarifies 3D thermal stress profiles under power cycling test (PCT) and thermal cycling test (TCT) with multi-physics solver for the system having Ag sintered bonding layer as a new chip attachment technology. Both reliability test...
Power semiconductor device technology needs highly efficient heat dissipation system having a chip bonding layer with high thermal conductance and reliability. This paper reports on 3D thermal stress profile and deformation with multi-physics solver for the system having Ag sintered bonding layer as a new chip attachment technology. The results clarified the reliability properties under thermal cycling...
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