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We proposed As+ ion implantation on SiO2 passivation layer of AlGaN/GaN HEMTs to improve the forward and reverse electric characteristics of AlGaN/GaN HEMTs. SiO2 passivation layer which was applied in this work suppressed the electron hopping from gate to the surface states of gate-drain region so that the virtual gate formation was suppressed and the electric field concentration was terminated....
A new inductively coupled plasma-chemical vapor deposition (ICP-CVD) SiO2 passivation for high voltage switching AlGaN/GaN high electron mobility transistors (HEMTs) is proposed to increase the breakdown voltage and the forward drain current. AlGaN/GaN HEMTs are fabricated and measured before and after SiO2 passivation. The measured off-state breakdown voltage of SiO2 passivated device is 455 V, whereas...
Improved characteristics of an AlGaN/GaN HFET are reported. In this paper, the authors introduce a new ohmic electrode of Ti/AlSi/Mo and a low refractive index SiNx to decrease the contact resistance and gate leakage current. The AlGaN/GaN HFET showed a low specific resistance of 6.3 mOmega middot cm2 and a high breakdown voltage of 750 V. The switching characteristics of an AlGaN/GaN HFET are investigated...
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