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The degradation of high power GaN-based blue light-emitting diodes (LEDs) was investigated by considering the electrical, optical and electroluminescence spectrum aging characteristics. The LED samples are stressed at the condition of 85°C and 85% RH using an injection current of 1000 mA. Optical output power decreases to 80% of initial value after 1000 hours of temperature/humidity accelerated tests...
To improve the positive- and negative-voltage electrostatic discharge (ESD) characteristics of GaN light-emitting diodes (LEDs), an air gap was introduced as an ESD protection structure in an Al film on the bottom side of a sapphire substrate. The negative-voltage ESD characteristic of GaN LEDs with an air gap was remarkably improved from -0.3 to -4 kV. The degradation of electroluminescent intensity...
Hot hole trapping was mechanism was reported for GaN HEMTs from observations of electroluminescence changes and threshold voltage shifts. Passivation effect was studied through EL on the surface traps or surface states and proved to be effective in real-time monitoring of HEMT operation.Hole trapping leading to an increase in the drain to source current, and a decrease in the threshold voltage have...
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