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We fabricated and characterized ultraviolet (UV) light-emitting diodes (LEDs) composed of n-ZnO/SiO2-ZnO nanocomposite/p-GaN heterostructures. Significant UV electroluminescence at 387 nm from the n-ZnO layer in this heterostructure LED was observed at a forward-bias current of as low as 1.8 mA. This is ascribed to the high quality of the n-ZnO layer and the effective function of the SiO2-ZnO nanocomposite...
Summary form only given. Charge separation due to spontaneous and piezoelectric polarization inherent to the wurtzite structure has deleterious effects on the performance of most c-axis oriented devices. To overcome this problem, Nonpolar GaN, such as a-plain and m-plain GaN or semipolar GaN substrates have been grown. We reported the fabrication of violet InGaN/GaN Light Emitting Diodes (LEDs) on...
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