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Lateral GaN-on-Si HEMT technology enables integrated high-voltage half-bridges with gate drivers. However, the capacitive coupling through a common conductive substrate influences switching characteristics. The measured hard-switching turn-on time with floating substrate increased to over 16 ns as compared to conventional source-connected substrate (1 ns), switching 300 V/4A with GaN ICs comprising...
THz technology offers multiple applications in areas such as remote sensing, spectroscopy, biomedical imaging, and ultra-wide bandwidth communications [1]. However, obtaining high-frequency performance at THz frequencies has proven challenging in conventional electronic devices. This difficulty motivated the exploration of unconventional transport mechanisms such as electron plasma waves. Two dimensional...
We study the half-field subband-Landau resonant splitting of a two-dimensional electron gas and demonstrate the possibility to tune the intersubband spacings via density-chopped far-infrared transmission spectroscopy in the absence of external magnetic field.
The AlGaN/GaN heterostructure is an excellent candidate for the realization of sub-millimeter wave power amplifiers, which can serve as integrated power source for THz frequency multipliers. Here we discuss the operation of AlGaN/GaN transistors as THz detector, which provides information on the behavior of the electron system at THz frequencies.
High electron mobility transistors can work as room-temperature direct detectors of radiation at frequency much higher than their cutoff frequency. One open issue is how the radiation couples to the sub-wavelength transistor channel. Here, we studied the coupling of radiation to an AlGaN/GaN transistor with cut-off frequency of 30 GHz. Local irradiation with a free electron laser source at 0.15 THz...
In this paper we present state of the art modeling of GaN HEMTs, which includes for the first time simultaneous consideration of the electromechanical coupling, short-range Coulomb and quantum mechanical size quantization effects.
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