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Advanced CMOS technology assures CMOS device as a good choice for physical realization of RF applications. But as scaling progresses, noise and short channel effect start to deteriorate the device performance, thus increasing the power dissipation. This work focuses on the analysis of thermal noise by varying the gate resistance and frequency. Equivalent noise voltage is calculated for various extracted...
The gate and bulk resistances influence on the impedance matching in case of MOSFET common gate amplifiers is investigated. It is shown that using a supplementary resistance of maximum 100Ω, S11 becomes less than −15 dB over a wide frequency range, therefore making the circuit suitable for low power wideband RF applications and less sensitive to the loading capacitor value, at the price of a supplementary...
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