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Multi-junction solar cells based on III-V materials are widely utilized for space applications owing to their light weight and very high efficiency. When used for terrestrial applications, they are used in concentrator systems to boost the efficiency and reduce the effective solar cell area to enhance the performance-to-cost ratio. However, the efficiency drops as the light intensity goes beyond a...
The main objective of this paper is to increase the power conversion efficiency by effective solar spectral band splitting. This is attained here by cascading semiconductor materials of varying energy band gap arranged in the decreasing order. In addition, an efficiency of a multijunction solar cell can be improved by current and lattice constant matching of the cells. Accordingly, a multijunction...
Quantum dot (QD)-based solar cells have been the subject of over two decades of research with the hopes of increasing their efficiency to surpass single junction solar cells. To date, no single working device has been developed that surpasses the efficiency of a single junction solar cell. Fundamental issues including unrealistic assumptions involved in theoretical work, tendency of stretching observed...
In this study, the optoelectronic properties of a monolithically integrated series-connected tandem solar cell are simulated. Following the large success of hybrid organic-inorganic perovskites, which have recently demonstrated large efficiencies with low production costs, we examine the possibility of using the same perovskites as absorbers in a tandem solar cell. The cell consists in a methyl ammonium...
Power electronic converters use semiconductors to satisfy the needs of different applications. Nowadays, these semiconductors are mainly based on Silicon (Si), which can be processed virtually without defects. However, the limits of Si are being reached and in consequence, Si based semiconductors have limited voltage blocking capability, limited heat transfer capability, limited efficiency and maximum...
In order to get higher efficiencies in multijunction solar cells, a 1eV material lattice matched to germanium has been searched tenaciously for years. In this context, a hybrid III–V/IV multijunction and single junction solar cells incorporating 1eV SiGeSn alloy are presented. A basic characterization of these solar cells, which has been grown by CVD and subsequent MOCVD, has been carried out.
Impact of annealing temperature, time and process gas on 1 eV GaNAsSb solar cells is assessed. In situ and ex situ annealings are carried out in order to analyze their effect on the solar cell performance. Ex situ annealings on as grown samples using N2 as process gas increase the external quantum efficiency while using H2 as process gas degrades the solar cell performance. Best performance is obtained...
The objective of this paper is to find out the optimum band gap energy for InGaN single and double junction solar cells providing the best efficiencies. The different physical phenomena occurring in the solar cells structures were taken into account. InGaN-based single and double junction solar cells were simulated with different band gap energy taking into account the dependence of the physical,...
This paper proposes an architecture for tunnel field effect transistor (TFET), which provides the reconfigurable property while controlling the ambipolar behaviour of the device. It is a double gate structure where the gates split and placed near the area where tunnelling occurs. The effect of metal work function variations as well device dimension reduction on current performance is analysed in this...
In this work, a front graded band gap of CIGS absorber is simulated where a spatial variation of the band gap energy decreases from a maximum value Egmax at the limit of the junction to a minimum value Egmin at the vicinity of the back contact within the length of the CIGS layer. An effective absorption coefficient due to this variation was defined. It will be seen that this graded profile contributes...
We report on Tunnel Field-Effect Transistors for low power electronics. Thanks to their potential to reach sub-60mV/dec subthreshold slope, these devices are very attractive for use in circuits with sub-0.5V supply voltage. However, proper device design as well as material choice is not obvious and many implementations have shown larger slope than expected, due to parasitic trap-assisted tunneling...
This paper represents theoretical efficiency and cell parameters of AlAs/GaAs/Ge based mew multijunction solar cell. A very new and unique model of multijunction solar is introduced in this paper. Using the modified version of spectral p-n junction solar cell model, the calculations of the solar cell parameters are done. All the calculations done for this work are completed by using MATLAB simulation...
The III-V compound semiconductor based multi-junction tandem solar cell has ultra-high efficiency and better cell stability. In this paper, a new type of AlGaAs/GaInAsP 2-J tandem solar cell has been introduced and designed by bandgrading thereby obtaining a set of descending layers having bandgap from 2.09eV–0.84eV and grown over a Ge substrate. For matching the currents between subcells, a tunnel...
We investigated the ballistic transport characteristics of black phosphorus tunneling transistors using BP hetero-junction with thicker BP film at the source-channel interface. With the reduced tunneling barrier width on-current can be increased over 6 orders in 1L-2L-1L ZD BP heterogeneous TFETs compared with 1L BP homogenous TFETs at the same ION/IOFF ratio. ION can be further enhanced by using...
Graphene's ultra-high carrier mobility (200,000cm2/Vs on hBN) [1] makes it promising for high speed applications; however the absence of a band-gap makes it hard to design logic elements out of graphene. It is possible to open a bandgap in graphene by applying strain [2] or by confining it in one direction into nanoribbons [3], but in the process bandstructure gets distorted near Dirac point and the...
This paper represents a comparison of theoretical efficiencies of three and four layer multijunction solar cell and the effects of varying the bottom layer material. Different types of solar cell models are mentioned here. The equations used for the calculations along with the material parameters are given. Total five materials of compound semiconductor with direct and indirect band gap are considered...
A wider band gap (2.3eV) material In0.5(Al0.7Ga0.3)0.5P based BSF layer lattice matched with both top In0.49Ga0.51P and bottom GaAs cell is found to increase 6% more efficiency than other widely used Al0.7Ga0.3As material under the same cell configuration because of its high photo generation rate. A numerical simulation analysis of these BSF layer in InGaP/GaAs dual-junction solar cell is investigated...
Back Surface Field layer plays an eminent role for both single and multi-junction solar cells for controlling the recombination rate. In this work multi BSF layers are used at both top and bottom cells to get higher efficiency. The work is done taking double junction InGaP/GaAs Solar cell and augmentation of the BSF layers is done using mathematical numerical modelling with Silvaco simulator. The...
This paper reviews the three main thin film solar cell technologies: amorphous silicon (α-Si), copper indium gallium selenide (CIGS), and cadmium telluride (CdTe). The evolution of these three technologies is discussed in comparison to commercial applications, reliability, and market share. While the α-Si cell is almost extinct in terrestrial applications, CIGS and CdTe are comparable to multicrystalline...
The parameters that influence the performance of solar cell, minority carrier lifetime is a crucial one. The increase of minority carrier lifetime results in higher conversion efficiency. Minority carrier lifetime is determined and analyzed for InGaN single junction solar cell at different excess carrier concentrations by considering the effect of radiative, Auger, Shockley-Read-Hall (SRH) and surface...
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