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This effort is founded on the modeling and simulation of the GaAsPN/GaP quantum dot (QD) solar cell. This quaternary alloy is one of the III‐V semiconductors, which gained importance in the recent years for optoelectronic applications. This importance comes from the fact that the quaternary GaAsPN can be a well‐grown lattice matched to GaP and Si substrates and to the bandgap that can be decreased...
In this work, a front graded band gap of CIGS absorber is simulated where a spatial variation of the band gap energy decreases from a maximum value Egmax at the limit of the junction to a minimum value Egmin at the vicinity of the back contact within the length of the CIGS layer. An effective absorption coefficient due to this variation was defined. It will be seen that this graded profile contributes...
The electrical and optical properties of InAsP/Si quantum dot solar cell are numerically analyzed in this paper. We have investigated many effects like the number of quantum dot layers inserted, and Arsenic composition of InAsxP1−x on the mains characteristics of a solar cell: Current-Voltage, and the External Quantum Efficiency EQE. It has been shown that Arsenic composition of 60% and 80% provide...
Our work focuses on the simulation and optimization of InSb/GaAs quantum dot solar cell. We have studied the effects of different parameters of the quantum dot such as the number of layers, the thickness and their influence on the solar cell characteristic (Current-Voltage, and the External Quantum Efficiency EQE). Moreover, we have studied the Photoluminescence PL spectra in order to characterize...
One of the limiting factors of solar cell efficiency is the inability of the latter to absorb photons with low energy than the gap. Among the new approaches to reduce such losses and to enhance the efficiency is using what are called Multiple Quantum Wells MQWs inside the intrinsic region of a p-i-n solar cell of wider band-gap energy (barrier or host) semiconductor. These configurations are intended...
In this work, we were interested about the study of modeling and simulation of a structure based on In1−xGaxN/GaN for photovoltaic applications. This ternary alloy who is an III-V semiconductor presents important characteristics especially its bandgap energy, thus the enhancement of the absorption of photons with wavelengths near to red. We had also studied a different parameters characterized the...
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