The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, an analytical model has been developed for the vacuum field-effect transistor (VFET). Mathematical expressions for drive in voltage and current has been derived. A drive in voltage has been modeled based on minimum current density for space charge limited emission. Analytical model of the channel current incorporates the device operating physics such as space charge limited emission...
Recent experimental work [1] has shown that there is a simple scaling function for the current I in a sharp tunneling junction as a function of the tip anode distance d. When the emitter has a large radius of curvature R the tunneling potential depends linearly on the field and scaling the latter with d obviously leads to the scaling of the current. But when the emitter is sharp and the barrier is...
The presence of adsorbed atoms or nonpolar molecules on the surface of a cathode results in an insignificant increase in field-emission current density over that observed for clean metal surfaces. If the adsorbate consists of polar molecules, at fields over 1 MV/cm, the current density can increase by an order of magnitude and more. When the adlayer thickness is several nanometers, the quantum nature...
A single photon avalanche detector featuring a transient carrier buffer layer to form an energy barrier that tentatively stops avalanche-generated carriers, demonstrates self-quenching and self-recovering capabilities. The escape rate of those stopped avalanche carriers from the barrier determines the self-recovery time and thus the count rate of the single photon detector. A physical model has been...
In order to extend the photo response of GaAs to optical telecommunication wavelengths, In and N can be incorporated into GaAs to yield a perfect lattice match of InxGa1-xAs1-yNy with GaAs with a bandgap that strongly decreases with increasing N composition. The potential usage of such a material as photodetectors and photovoltaic applications has been reported.In this work, we investigate the dark...
Bipolar (electrons and holes) charge injection, the onset voltages of electroluminescence as low as 1.4 V, and power efficiency of around 0.2% are demonstrated in thin nanocrystalline-Si/SiO2 multilayer LEDs grown by plasma-enhanced CVD.
We have studied the temperature dependence of electrical conductivity in semi-insulating polycrystalline silicon (SIPOS) layers deposited on SiO2 with and without transverse electric fields for oxygen concentrations ranging from 2 to 30 at. % o. At 30 at. % O, for transverse fields of the order of 106 V/cm, the room temperature conductance increases by a factor ??300 with respect to weak transverse...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.