The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The dual-channel SiC MESFET is ameliorated for application in high power fields. The current density and breakdown performance are simulated by using ISE-TCAD. The maximum saturation current density and breakdown voltage are about 420 pA/pm and 155 V, respectively, which are larger than those of the dual-channel 4H-SiC MESFET, 270 pA/pm and 141 V. The resultant maximum output power density is 7.4...
Recently SiC power devices such as SiC-MOSFET have been improved drastically as a next generation power device because of its superior physical property. Although very high carrier density is essential reason for the superior characteristics of that, there is a fundamental problem to realize the predicted performances. One is limit of rating current density by self-heating. The other is destruction...
We found the full analytical solution of the semiclassical model, described the stationary profile of the electric field in the miniband semiconductors, subjected to the DC voltage. The analysis of obtained solution shown the three different types of the field distribution, taken place in the semiconductor depending on the emitter current-field characteristics. Among the observed profiles we found...
The unique design of Silicon Carbide (SiC) Junction Barrier Schottky (JBS) diode has proved its superiority over silicon in the field of high energy density pulsed power applications. JBS diode design enables the development of high blocking voltage silicon carbide rectifiers with low ON-state voltage drop, low leakage and negligible reverse recovery. In pulsed power applications, devices get driven...
Rapid improvement of 4H-SiC material quality and maturation of SiC device processing have enabled the development of high voltage SiC bipolar devices for high voltage switching applications. As one of the major concern of bipolar devices, the onset of dynamic avalanche breakdown and reverse biased safe operating area (RBSOA) of SiC pnp and npn transistors have been systematically analyzed in this...
Simulation investigations on 4H-SiC based double-drift avalanche-transit-time diode clearly establishes it's potential at higher terahertz region. Further, the effects of punch-through on the terahertz behavior of the device are studied for the first time, through a generalized simulation technique. The computed results revealed that for a fixed bias current density, when the space-charge effect is...
Computer simulation has been carried out to investigate the effect of punch through on the breakdown properties such as peak electric field, breakdown voltage and DC-to-RF conversion efficiency of 4H p+nn+ SiC Impatts. The effect of mobile space charge and diffusion has been incorporated in the analysis. The results indicate increase of junction field at breakdown with sharp decrease of breakdown...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.