The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, high voltage Bipolar Junction Transistors are presented and compared in order to suggest a bidirectional switch for household appliances with fully turn-on, turn-off control. A comparative theoretical study, using 2D simulations, shows that concepts like “superjunctions” and “floating islands” improve the static current gain without unwanted behavior like parasitic diodes.
In this paper, some high voltage Bipolar Junction Transistors are presented and compared in order to suggest a switch for household appliances with fully turn-on, turn-off control. For the first time, a comparative theoretical study, using 2D simulations, shows that concepts like the “superjunction” improve the static behaviour of conventional BJT. These new structures are compared with a SJMOSFET...
A study on the injection-induced damage to bipolar transistor (BJT) under the intense electromagnetic pulse (EMP) is carried out in this paper. The distribution and variation of the electric field, current density and temperature are obtained and analyzed with the device simulator Medici employed. Simulation results show that when the applied voltage reaches a certain value, there is a conducting...
Rapid improvement of 4H-SiC material quality and maturation of SiC device processing have enabled the development of high voltage SiC bipolar devices for high voltage switching applications. As one of the major concern of bipolar devices, the onset of dynamic avalanche breakdown and reverse biased safe operating area (RBSOA) of SiC pnp and npn transistors have been systematically analyzed in this...
The recessed gate IGBT has a lower on-state voltage drop compared with the DMOS IGBT, because it doesn't have a JFET region. But due to the electric field concentration in the corner of the gate edge, the breakdown voltage decreases.
Transient thermal analysis of a bipolar junction transistor (BJT) is carried out in this paper, with the hybrid finite element method (FEM) employed. The distribution and variation of the electronic field, current density, and temperature in the transistor under the impact of an electromagnetic pulse (EMP) are characterized numerically.
The authors discuss the impact of device cell geometry on the safe operating area (SOA) of IGBTs (insulated-gate bipolar transistors). Two-dimensional computer simulations of the electric field distribution and avalanche breakdown have been performed for a variety of cell geometries. Simulation of the square-cell and linear-cell geometries used in previous devices showed that the SOA is determined...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.