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In present work the effect of two different source of silicon Tetraethylorthosilicate and Octamethylcyclotetrasiloxane on TiO2-doped SiO2 films have been studied. The study reveals that film properties depend on the precursors used for deposition. The optical, chemical and surface properties have been characterized using ellipsometer and SEM with EDAX.
In this work, the surface and interfacial properties of the ultra-thin HfO2/SiO2 gate stack dielectrics fabricated on the p-type Si (100) substrates by atomic layer deposition is studied. Grazing incidence x-ray diffraction result manifests the HfO2 film is almost ideal amorphous phase. Atomic force microscopy images reveal that the surface roughness of the HfO2 is extremely small and the surface...
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