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Transparent and electrically conductive (TCO) thin films of ZnO:Al, ZnO:Ga and ZnO:Sc, used in solar cells as well as optoelectronic devices, have been successfully deposited by rf magnetron sputter deposition using ZnO(98%) / X2O3(2%) ceramic target, X ∈{Al, Ga, Sc}, in the inert atmosphere of argon. In this contribution we focused on the changes in physical properties and their comparison in dependence...
In this paper, Ti-doped ZnO TFTs on SiO2/Si substrates by simultaneous RF sputter of Zn and DC magnetron sputter of Ti are successfully fabricated. With undoped ZnO TFTs, as-grown Ti-doped ZnO are compared with post-annealed Ti-doped ZnO TFTs in the furnace at O2 atmosphere of 300 °C. As the annealing time increases, the electrical characteristics such as sub-threshold slop (SS) and on/off current...
The effect of UV irradiation on ZnO thin film based gas sensor was investigated. Zinc oxide thin films were deposited on an alkali free glass substrate by magnetron sputtering system using zinc target. The UV irradiation of the ZnO thin films was measured to understand the change of microstructure, electrical properties, optical properties and gas sensing characteristics. The X-ray diffraction patterns...
Using the magnetron sputtering technology, high quality Al2O3-based textured ZnO thin films (Al2O3/ZnO) which can be applied to solar cells' light trapping effect were fabricated by controlling the preparation parameters properly. X-ray diffraction (XRD) and Scanning electron microscopy (SEM) results show that O2 /(Ar+O2) flow ratio has great influence on Al2O3/ZnO films surface morphology during...
Al-doped ZnO films with different Al concentrations were prepared on freestanding diamond (FSD) substrates by radio-frequency (RF) reactive magnetron sputtering method. The effects of Al concentrations and annealing process on the structural and electrical properties of the ZnO films were studied by X-ray diffraction (XRD) and Hall effect measurement system respectively. The experimental results suggested...
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