The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Noise parameter measurements of six candidate transistors for a Square Kilometer Array (SKA) low-noise amplifier (LNA) are presented. They provide reliable data in the frequency range where some low-noise transistors are inadequately characterized. The results of these measurements inform the design of an LNA for SKA1-Survey Band 2 with measured minimum noise temperature of 21 K.
Using a large-scale array test circuit, both static characteristics and random telegraph noise (RTN) of in-pixel source follower equivalent transistors of a CMOS image sensor with buried and surface channel transistor structures were statistically evaluated under various current and body bias conditions. The distribution of noise intensities at various operational bias conditions, correlations between...
A QVGA array of autonomous, event-based temporal contrast sensitive pixels is at the basis of an asynchronous, time-based CMOS dynamic vision and image sensor (ATIS). In this sensor, exposure measurements are initiated and carried out locally by individual pixels upon detection of temporal contrast in their field-of-view. The change detection pixel circuits respond with low latency to temporal contrast...
60 GHz LNA/PAs, phase shifters (PS), combiners and switches were designed for integrated phase array in CMOS. These components achieved the best known power consumption and size compared to previous publications reported, as a result of the methodology flow and layout optimization that was developed for 60 GHz designs. The extensive use of passive architecture together with the compact layout will...
This paper presents a 60 GHz LNA designed in a 90 nm CMOS process with 6 metals Cu thick metal, and Ft/Fmax of 100 GHz/150 GHz demonstrating best known noise figure, gain, power consumption and size compared to earlier 60-GHz LNAs reported. It features 15 dB of gain, a measured noise figure (NF) of 4.4 dB, while drawing 3 mA from a 1.3-V supply. The use of spiral inductors enables a reduction in transistor...
Intended for industrial applications, a pixelstructure with a logarithmic response is presented in this paper. An XY-addressable image architecture based on this pixel was implemented in silicon. Measurement data on this sensor are discussed. The logarithmic response will be quantified using a more general signal to noise ratio. A parallel is drawn with concepts of human perception theory.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.