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This paper gives a comprehensive comparison of two promising silicon carbide (SiC) switching devices, i.e. normally-off SiC MOSFET and a normally-on SiC JFET, as alternatives to a conventional state of the art Si IGBT. The comparison uses datasheet information to determine conduction losses, switching transition measurements for switching loss calculations and electrical power measurements in a boost...
The modular multilevel converter (MMC) is the most promising converter topology for medium- and high-power applications. One of the main concerns in the operation of the MMC, particularly for high-power applications, is its efficiency, which should be maximized. Silicon Carbide (SiC)-based devices have the potential to provide significant efficiency improvement compared with silicon devices. However,...
In this paper, an assessment of the silicon carbide power modules in power inverters is presented. Comparison of total power losses and efficiency of a silicon carbide based three phase inverter with silicon base is analyzed and studied. The efficiency of the silicon carbide b ased inverters based on chosen device is found to be above 99%, and more efficient than most conventional silicon based inverters,...
Silicon carbide (SiC) JFET devices exhibiting normally-off characteristics have become commercially available, enabling their adoption into power supply products. In this paper, the synchronous rectification characteristics of SiC JFETs are investigated and their overall performance in single phase power factor correction (PFC) circuits is measured. Efficiency comparisons in a high efficiency telecommunications...
The state-of-the-art SiC JFETs are characterized. Three-phase full-bridge inverter power loss models based on experimental data are established and used to estimate inverter efficiency. The impact of load power, temperature, and switching frequency on inverter efficiency is analyzed and demonstrated. The efficiency of the SiC JFET inverters based on present device quality is above 98% with full load...
In this paper the implementation and the performance of 1200 V / 30 A / 65 mOmega normally-off SiC-JFETs in photovoltaic inverters (PV-inverters) is shown and compared with Si-IGBTs. The JFETs' low switching energy and on-resistance lead to an improvement of efficiency and a reduction of costs and weight of PV-inverters.
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