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A high-performance and energy-efficient 256-bit CMOS priority encoder is presented and realized on transistor level using 32 nm predictive technology. The new circuit is designed with a full custom approach and incorporates 2 novel logic styles: the Multiple-Output Monotonic CMOS (M2CMOS) and the Dynamic Inversion technique (DI). The achieved performance is in the order of O(log2(N)), with respect...
This brief summarizes the comparative analysis of a 2 bit Magnitude Comparator using different techniques. A comparator forms a fundamental element which is used in the complex arithmetic and logical circuitry that involves the comparison of n-bit numbers. Various high performance methods which are aimed at enhancing the performance statistics are simulated at 45nm technology using Tanner EDA Tool...
The silicon MOS transistors for VLSI have been scaled down for more than forty years in order to attain higher speed, lower power, higher integration, and lower cost. The gate length is now less than 30 nm. The silicon devices are certainly in the nanometer regime. Fig. 1 shows technology nodes and gate length according to ITRS [1]. It is predicted in the 2009 version of ITRS that the gate length...
In this paper, stack forcing and back biasing are analyzed as techniques to reduce leakage in active mode in FinFET VLSI circuits. Analysis is focused on buffers as representative circuit example, and is based on mixed-mode device-circuit simulations on 27-nm and 40-nm FinFET technologies. Voltage limits for back biasing are discussed. Results contradicting usual assumptions for bulk CMOS are found,...
In this paper, the DC behavior of subthreshold CMOS logic is analyzed in a closed form for the first time in the literature. To this aim, simplified large-signal and small-signal models of MOS transistors in subthreshold region are first developed. After replacing transistors with these equivalent models, analysis of the main DC parameters of CMOS logic gates is presented. In particular, the change...
Both CMOS scaling and NEMS sensor devices scaling converge to the same type of sub 100 nm objects. This opens new fields of application for IC chips integrating both complex signal treatment and very highly sensitive sensing functionalities.
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