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We present a quantitative physical model describing the current evolution due to the formation of a conductive filament responsible for the HfO2 dielectric breakdown. By linking the microscopic properties of the stress-generated electrical defects to the local power dissipation and to the corresponding temperature increase along the conductive path the model reproduces the rapid current increase observed...
The effect of constant voltage stress on Pt/La2O3/n-Ge MOS devices biased at accumulation is investigated and reported. It is found that the stress induced leakage current (SILC) initially increases due to electron charge trapping on pre-existing bulk oxide defects. After 10 s approximately, a clear decay of SILC commences which follows a t-n power law, with n lying between 0.56 and 0.75. This decay...
Response of Ta2O5 stacks with Al and Au gates to voltage stress at gate injection is studied by probing at various voltage/time conditions. The pre-existing traps govern this response, and the impact of gate-induced defects is stronger. Two processes, electron trapping at pre-existing traps and positive charge build-up, are suggested to be responsible for generation of stress-induced leakage current...
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