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The silicon wafer accounts for about half of the photovoltaic module cost. We believe two aspects are essential to reduce considerably the "wafer" costs: the feedstock issue and ribbon technology. In the SDS process the pre-ribbons are grown directly from silane by fast CVD process and followed by zone melting recrystallization (ZMR). In this paper a new generation of fast CVD reactor to...
Plastic electronics, thin-film-transistors on foil and ultra-thin chips on foil are technologies currently pursued to support the strongly emerging market for flexible electronics. Ultra-thin CMOS chips in such systems will provide solutions whenever high circuit performance and/or complexity are required. Ultra-thin Si chips (6 to 20 mum) are fabricated by using a recently introduced technology based...
As performance gains from scaling silicon slow, improvements in system performance must come from tighter integration. Proximity communication (PxC) enables designers to aggregate multiple chips that perform as a single large piece of silicon. PxC enables the heterogeneous integration of an optimized mix of process technology and functionality, such as DRAM, flash memory, and CMOS processor chips...
A technology was developed for the fabrication of very thin, chip-sized lithium secondary micro batteries. Based on wafer level processing the batteries can be directly implemented into silicon chips, 3D chip stacks or MEMS devices. The batteries were packaged in 200 mum deep cavities of the silicon wafer and encapsulated with a glass substrate. Battery demonstrators with 7 and 12 mm2 and round foot...
System integration is clearly a driving force for innovation in packaging. The need for miniaturization has led to new system in package (SiP) architectures, which combine a whole range of different technologies. However, cost is the critical issue in SiP packaging as individual operations are currently necessary to complete each individual package. Taking into account all the developments that have...
We have investigated pure germanium two-dimensional photonic crystals. The photonic crystals which exhibit resonances in the near infrared spectral range were fabricated on germanium-on-insulator substrates using standard silicon-based processing. The germanium-on-insulator substrate consists of a thin layer of pure germanium-on-oxide deposited on a silicon substrate. The optical properties are probed...
We propose many-element cascaded-resonator devices with gapless non-evanescent inter-cavity and waveguide-to-cavity coupling using double-notch-shaped microdisk resonators. We demonstrate such devices with up to 50 elements in a silicon nitride-on-silica substrate.
Monte Carlo (MC) simulation of thin oxide evaporation from silicon surface was carried out. Including in MC model chemical reactions of creation and dissociation of silicon monoxide during annealing makes it possible to simulate evaporation of a thin oxide layers. It was shown, that defects in the oxide matrix provoke starting of the layer dissociation processes.
We present design and fabrication of two-dimensional photonic crystal cavities made in nanoporous silicon luminescent at 700-800 nm. Enhancement in photoluminescence extraction efficiency at the resonant wavelength is expected due to Purcell effect.
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