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In the coming decade, CMOS technology is expected to approach its scaling limitations. Among the proposed nanotechnologies, nanowires have the edge in the size of circuits and logic arrays that have already been fabricated and experimentally evaluated. For this technology, logic-level design methodologies are being developed. The time has now come to develop automated tools for implementing VLSI designs...
In this paper, sub-10 nm gate-all-around (GAA) CMOS silicon nanowire field-effect transistors (SNWFET) on bulk Si substrate are fabricated successfully for the first time with 13-nm-diameter silicon nanowire channel. On-state currents of 1494/1054 muA/mum at off leakage currents of 102/6.44 nA/mum are obtained for N/PMOS, respectively. The impacts of nanowire diameter (DNW) and gate oxide thickness...
In this paper, we introduce a novel reconfigurable architecture, named 3D field-programmable gate array (3D nFPGA), which utilizes 3D integration techniques and new nanoscale materials synergistically. The proposed architecture is based on CMOS nanohybrid techniques that incorporate nanomaterials such as carbon nanotube bundles and nanowire crossbars into CMOS fabrication process. This architecture...
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