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22nm node Si SOI Coplanar “N Channel Vertical Dual Carrier Field Effect Transistors” (VDCFET) and its SOC with effective channel length less than 10nm for communication applications are presented.
A numerical model is developed for solving two dimensional Poisson-Schrodinger equation in depletion-all-around (DAA) operation of n-channel four gate transistor (G4FET) by finite element method using COMSOL with MATLAB. The results from this model can be used to calculate ballistic drain current by mode-space approach. Potential distribution, conduction band profile, eigen energy profile and wave...
Ultra Thin Body Si-On-ONO (UTB SOONO) transistors with ultra thin spacer are successfully demonstrated and evaluated. They have shown increased driving current more than 30% compared with conventional UTB SOONO transistors with thick spacer due to reduced source/drain resistance without short channel effect degradation by using thin spacer. In this paper, it is shown that thin spacer technology is...
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