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In this paper, for the first time, a novel power partial silicon-on-insulator (PSOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) field-effect transistor is proposed with dual p- and n- charge accumulation (CA) layers near the source and the drain (DCAL-PSOI). Two new high electric field peaks are introduced by the two p- and n- CA layers in the proposed structure. Hence, a more uniform...
In this paper a new design for conventional Partial SOI (PSOI) structure is proposed, which employs a step in buried oxide of the partial SOI structure. This new structure is called step partial buried oxide structure (SPBOS). The step in the buried oxide produces an additional electric field peak, which decreases the other electric field peaks near the drain and source junctions drastically. Our...
A non-classical device structure namely self-aligned quasi-silicon-on-insulator (SOI) metal-oxide semiconductor (MOS) field-effect transistor with pi-shaped semiconductor conductive layer (SA-piFET) is presented, seeking to improve the performance and upgrade the reliability of the SOI-based devices. Designed to equip with a SA single crystal silicon channel layer, plus a natural source/drain (S/D)...
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