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Gated resistor is an accumulation mode device without any junction (p-n junction or Schottky junction) in which the channel doping concentration is generally equal to doping concentration on the source and drain. Gated resistors have been fabricated to avoid the super steep and troublesome doping profile of conventional Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It simplifies the...
Two dimensional Poisson-Schrödinger equation is solved numerically in depletion-all-around (DAA) operation of n-channel four-gate transistor (G4-FET) by finite element method using COMSOL with MATLAB. Ballistic drain current is calculated by mode-space approach using modified Tsu-Esaki equation. Effect of multiple gate bias on current-voltage characteristics is observed.
22nm node Si SOI Coplanar “N Channel Vertical Dual Carrier Field Effect Transistors” (VDCFET) and its SOC with effective channel length less than 10nm for communication applications are presented.
Partially Depleted Silicon-On-Insulator (PDSOI) Low Barrier Body Contact (LBBC) Body Under Source FET (BUSFET) is proposed by using ISE TCAD 2D process and device simulation. The difference between LBBC BUSFET and normal BUSFET is given. LBBC BUSFET shows improved resistance to radiation over normal BUSFET, thanks to lower body contact resistance and reduced junction barrier height. PDSOI LBBC BUSFET...
A numerical model is developed for solving two dimensional Poisson-Schrodinger equation in depletion-all-around (DAA) operation of n-channel four gate transistor (G4FET) by finite element method using COMSOL with MATLAB. The results from this model can be used to calculate ballistic drain current by mode-space approach. Potential distribution, conduction band profile, eigen energy profile and wave...
We report for the first time experimental investigations on SOI, Si1-xGexOI & GeOI Tunnel FET (TFET). These devices were fabricated using a Fully Depleted SOI CMOS process flow with high k-metal gate stack, enabling 2 decades lower IOFF (~30fA/mum) compared to co-processed CMOS. We successfully solve the TFET bipolar parasitic conduction by a novel TFET architecture, the Drift Tunnel FET (DTFET),...
We report a novel contact technology comprising Selenium (Se) co-implantation and segregation to reduce Schottky barrier height PhiBn and contact resistance for n-FETs. Introducing Se at the silicide-semiconductor interface pins the Fermi level near the conduction band, and achieves a record low PhiBn of 0.1 eV on Si:C S/D stressors. Comparable sheet resistance and junction leakage are observed with...
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