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A new Membrane PSOI High Voltage Device with a Buried P+ layer (MBP+ PSOI) is proposed. Breakdown voltage is only decided by lateral breakdown voltage because of the entire removing of silicon substrate under the drift region and breakdown voltage can be improved with increase of the length of the drift region. Introducing of P+ layer can effectively reduce specific on-resistance and silicon window...
In this paper, we report the possibility of achieving sub-kT/q subthreshold slope (i.e. lower than 59.6 mV/decade at T=300 K) without using either impact ionization or band-to-band tunneling. The device uses intraband tunneling within the conduction band through barriers whose shape varies with the applied gate voltage. Subthreshold slope as low as 56.5 mV/decade is reported at T=300 K. The VBT reported...
Different thermal processes and substrates were used to investigate the time evolution of phosphorus loss due to segregation at the Si-SiO2 interface. Dose recovery occurred as phosphorus diffused into bulk silicon during furnace annealing. Dose loss increased when samples were cycled between silicon implantation and rapid thermal annealing (RTA). This implies that transient enhanced diffusion promotes...
The mobility and, more generally, the transport parameters of MOS devices are key quantities for the performance evaluation in advanced CMOS technologies. In this work, a review of the main mobility results obtained in short channel devices (here GAA/DG, FD-SOI MOSFETs and FinFETs) are presented and discussed for better understanding their transport limitations and, in turn, their performances.
In this paper a new design for conventional Partial SOI (PSOI) structure is proposed, which employs a step in buried oxide of the partial SOI structure. This new structure is called step partial buried oxide structure (SPBOS). The step in the buried oxide produces an additional electric field peak, which decreases the other electric field peaks near the drain and source junctions drastically. Our...
In the continuing thrust to extend Moorepsilas law, silicon is beginning to confront several issues that require innovative materials solutions to increase transistor and interconnect speeds while dealing with the increasing thermal loads of advanced microprocessors. The unsurpassed thermal, electrical and mechanical properties of diamond can be used to solve some of the thermal issues and enhance...
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