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A systematic study on the effects of arbitrary parasitic charge profiles, such as trapped or fixed charge, on the 2-D potential distribution in the drain extension of reverse-biased field-plate-assisted reduced surface field (RESURF) devices is presented. Using TCAD device simulations and analytical means, the significance of the so-called characteristic or natural length \(\lambda \) is highlighted...
We have analyzed the different structures of the DG MOSFETs and their potentials in suppressing short channel effects (SCEs). In particular, we have developed compact physics-based model of the subthreshold swing. Asymmetric DG MOSFET shows superior performance in the nanometer region. The new scale length for DG MOSFETs has been derived from the subthreshold swing model (S model). The new scale length...
Recent silicon process technology advancements have given chip designers integration capabilities never were possible before, and have led to a new wave of complex ASICs (applied specific integrated circuits). These advanced processes come with new challenges. This paper presents some of the challenges in deep submicron technologies, which require new design practices. We demonstrate some issues related...
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