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The radiation response of advanced non-planar multiple gate field effect transistors (MuGFETs) has been shown to have a strong dependence on fin width (W). The incorporation of total ionizing dose (TID) effects into a physics-based surface-potential compact model allows for the effects of radiation-induced degradation in MuGFET devices to be modeled in circuit simulators, e.g., SPICE. A set of extracted...
This paper presents the asymmetric issue of FinFET device after hot carrier injection (HCI) effect and impact on the digital and analog circuits. The interface state distribution along the FinFET channel is first extracted from hot carrier injection experimental data, and then develops a compact FinFET model to simulate the impact on asymmetric distribution of interface states to the device characteristics...
A unified FinFET reliability model including high K stack dynamic threshold (HKSDT), hot carrier injection (HCI), and negative bias temperature instability (NBTI) has been developed and verified by experimental data. The FinFET-based circuit performances are simulated and compared under these reliability issues by HSPICE simulator after the inclusion of the presented model.
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