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A dual-band CMOS low-noise amplifier (LNA) for ISM-band application is reported. For low power and dual band operation, the designed LNA adopts a positive-feedback LC-ladder network. Moreover, for cost effective approach, the LNA has been fabricated using a 0.18-mum mixed-signal CMOS process. The implemented LNA shows gain of 8.3 dB and 11.2 dB, and noise figure (NF) of 6.1 dB and 6.6 dB at 19 GHz...
This paper presents a concept for integration of ESD protection devices without degrading the high-frequency circuit performance. A differential 18 GHz low-noise amplifier (LNA) has been realized in 0.13 mum CMOS. The ESD protection devices are connected using on-chip inductors. The measured JESDHBM performance is > 2 kV including RF-pins.
Design and implementation of ESD protection for a 5.5 GHz Low Noise Amplifier (LNA) fabricated in a 90 nm RF CMOS technology is presented. An on-chip inductor, added as ldquoplug-and-playrdquo, is used as ESD protection for the RF pins. The consequences of design and process, as well as the limited freedom on the ESD protection implementation for all pins to be protected are presented in detail and...
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