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Decreasing the chip thickness of insulated gate bipolar transistor (IGBT) to improve the performance makes the current crowding effect become more pronounced during short-circuit turn-off, especially in the self-clamping mode (SCM). Former researchers have investigated the failure mechanisms during short-circuit turn-off. But the measures to further improve the robustness of IGBT during short-circuit...
Subthreshold logic has gained wide interest for ultra low power applications such as RFID, microsensors, energy harvesting etc. Double gate FinFETs are shown to be better candidates for subthreshold logic design than equivalent bulk devices, though it is not yet clear at this stage which configuration of DG-FinFETs will be more optimal for subthreshold logic. In this paper, we compare the different...
This paper discusses the design of a 60 GHz low noise amplifier (LNA) using a standard low power SOI CMOS process from ST Microelectronics. First, we outline the technology as well as the mm-wave design challenges. Using recent work on coplanar waveguide (CPW) modeling, we describe how it's possible to use parametric, 3D electromagnetic simulation to complete or replace analytical models of on-chip...
For several decades, the output from semiconductor manufacturers has been high volume products with process optimisation being continued throughout the lifetime of the product to ensure a satisfactory yield. However, product lifetimes are continually shrinking to keep pace with market demands. Furthermore there is an increase in dasiafoundrypsila business where product volumes are low; consequently...
This paper describes a design flow for the circuit-level optimization of a technology. The concurrent exploration of device characteristics and library design choices leads to a more application-optimal technology. We illustrate the design flow by: 1) analyzing the impact of buffer cell design, and 2) by optimizing a 130 nm technology for low operational power.
We present a generic method for analyzing the effect of process variability in nanoscale circuits. The proposed framework uses kernel and a generic tail probability estimator to eliminate the need for a-priori density choice for the nature of circuit variation. This allows capturing the true nature of the circuit variation from a few random samples of its observed responses. The data-driven, non-parametric,...
The dramatic increase in leakage current, coupled with the swell in process variability in nano-scaled CMOS technologies, has become a major issue for future IC design. Moreover, due to the spread of leakage power values, leakage variability cannot be neglected anymore. In this work an accurate analytic estimation and modeling methodology has been developed for logic gates leakage under statistical...
This paper presents an innovative structure based on 3 dimensional integration technology, where ultra thin inter layer dielectric enables a dynamic threshold voltage (VTH) control. A sequential process flow is proposed to fabricate 3D devices with dynamically tunable VTH. This ability can be exploited to design SRAMs cells with increased stability and surface density compared to planar technology...
Novel 3D stacked gate-all-around multichannel CMOS architectures were developed to propose low leakage solutions and new design opportunities for sub-32 nm nodes. Those architectures offer specific advantages compared to other planar or non planar CMOS devices. In particular, ultra-low IOFF (< 20 pA/mum) and high ION (> 2.2 mA/mum) were demonstrated. Moreover, those transistors do not suffer...
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