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HfO2 layers, 25-Å thick, were grown by cyclic Hf sputter deposition and room temperature oxidation steps on chemically oxidized Si(001). Subsequent in situ annealing and TiN deposition yield a high-$\kappa$ gate-stack for which the original 8-Å-thick SiO2 layer is eliminated, as confirmed by transmission electron microscopy. Transistors fabricated with this gate-stack achieve an equivalent oxide...
Gate dielectrics are of great interest in AlGaN/GaN transistors to increase the Ion/Ioff ratios and to reduce gate leakage. However, integrating gate dielectrics with recessed gates require low temperature dielectric depositions where the gate photoresist is patterned and the gate is recessed before dielectric deposition. This study aims to characterize gate insulators deposited by low temperature...
Gate first 0.59 nm EOT HfOx/metal gate stacks for 16 nm node application are demonstrated for the first time. By controlling O during HfOx deposition, ldquozerordquo low-k SiOx interface (ZIL) forms despite a 1020degC activation anneal. This 0.59 nm EOT is a 30% improvement over a state of the art 32 nm HK/MG technology. We compare and demonstrate for the first time the improved scalability of ZIL...
Pentacene-based organic thin-film transistor (OTFT) with HfO2 as gate dielectric is studied in this work. The HfO2 dielectric was prepared by RF sputtering at room temperature, and subsequently annealed in N2O or NH3 at 200degC. The OTFTs were characterized by IV measurement and 1/f noise measurement. The OTFTs show small threshold voltage and can operate at as low as 3 V. Results indicate that the...
In this paper, two types of promising high-k dielectric films is studied which are hafnium dioxide, HfO2 and zirconium dioxide,ZrO. Capacitance-Voltage measurements were carried out to investigate properties such as oxide charges and interface trap charges that exist in the dielectric films. The investigation has been carried out by experiment and modeling. Annealing experiments in forming gas at...
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