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This paper describes the development of a power device characterization curve tracer based on transient thermal measurement. Experimental test set ups along with the required conditions to mitigate the measurement errors are discussed. The measurement algorithms are implemented in LabVIEW environment as a set up controller. The junction temperature is maintained at the specified set point for carrying...
A temperature control system was designed. System structure was established by taking C8051F002 SCM as the core. The interface circuit between SCM and measurement and control computer is designed using MAX3232. Temperature-measure circuit is designed using ADI corporation's chip AD7416. Temperature-control circuit is designed with SCM's two 12-bit DACs. The flow chat of main program is introduced...
We have assessed the use of commercial silicon-on-sapphire CMOS electronics in control circuits, which could be used to interface with quantum bits at low temperatures. We have characterized n-type MOSFETs, p-type MOSFETs, and an n+-diffusion resistor at 300 K and 4.2 K and extended these studies into the millikelvin regime. Our measurements of dc responses at 300 K, 4.2 K, and subkelvin and transient...
Cooling is important to keep the temperatures of the highly integrated silicon electronic devices and power devices e.g. power MOSFET, IGBT. Yamaguchi et al. have proposed a new scheme to cool down the devices by its own current named ldquoself-cooling devicerdquo, in which the cooling process uses Peltier effect. In the proposed scheme, we should use the materials that have high thermal conductivity,...
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