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In this work, a CMOS transistor array is presented, which allows performing process variability, Random Telegraph Noise and BTI/CHC aging characterization in a single chip. The array, called ENDURANCE, integrates 3136 MOS transistors, for single and massive electrical testing. This chip, together with a dedicated measurement set-up, allows programming any of these electrical tests, considerably reducing...
Bias Temperature Instability (BTI) under sub-microsecond DVFS transients manifests as instantaneous frequency degradation and recovery that has been predicted in past literature but has never been experimentally verified due to difficulty in obtaining high quality data. This work demonstrates a new odometer circuit specifically designed to measure the aforementioned effect. The basic idea is to use...
Polarities of plasma charging damage in n- and p-channel MOSFETs with Hf-based high-k gate stack (HfAlOx/SiO2) were studied for two different plasma sources (Ar-and Cl-based gas mixtures), and found to depend on plasma conditions, in contrast to those with conventional SiO2. For Ar-plasma, which was confirmed to induce a larger charging damage, both n- and p-ch MOSFETs with high-k gate stacks suffer...
A 53 dB gain limiting amplifier for OC-192 and 10 GbE applications is developed in a 50 GHz fT SiGe SOI complimentary bipolar process, and has 5 mV pk-pk sensitivity, 1.25 V pk-pk maximum input signal, 14 ps (20/80%) rise/fall times and 450 mV pk-pk output into matched differential 50 Ohm loads, consuming 430 mW on a 3.3 V supply. Input Cherry-Hooper gain stages limit the -3 dB bandwidth to 11 GHz...
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