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We present a novel method for the extraction of the relevant electrical and physical parameters of Schottky diodes realized on polycrystalline thin films. The proposed approach relies on a limited set of current–voltage characteristics measured at different temperatures and does not require the previous knowledge of any semiconductor parameter. The procedure provides satisfactory results in terms...
The measurements of isothermal and non-isothermal DC characteristics of SiC Schottky barrier diodes are presented in this paper. Various electro-thermal models for I-V characteristics calculation are proposed. The calculations of non-isothermal characteristics of SiC SBD's in the wide range of forward voltage are shown. The self-heating phenomenon, as an electro thermal positive feedback is discussed...
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