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A high-performance CMOS readout structure employing a new background current skimming technique for infrared focal plane array (IFPA) applications is proposed, analyzed, and verified. Both the background current skimming circuit and bias circuit have good immunity to threshold voltage variations. In addition, the background current skimming circuit is also independent of temperature variations. An...
This paper presents a novel architecture of ultra-low offset comparator latch using on-chip calibration to compensate the process variation. The proposed technique compensates the variation in process parameters such as W/L, μCOX and threshold voltage independently by considering the intrinsic behavior of the MOS transistors without using power-hungry complicated circuits on measuring the transistor...
The reliability of advanced embedded non-volatile memories has been discussed using the 2T-FNFN devices example. The write/erase endurance and the data retention are the most important reliability parameters. The intrinsic reliability mechanisms can be addressed through single cell evaluation, while the cell-to-cell variation determines the product level reliability. The cell-to-cell variation can...
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