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A simple semiempirical model ID(VGS, VDS) for short-channel MOSFETs applicable in all regions of device operation is presented. The model is based on the so-called ldquotop-of-the-barrier-transportrdquo model, and we refer to it as the ldquovirtual sourcerdquo (VS) model. The simplicity of the model comes from the fact that only ten parameters are used. Of these parameters, six are directly obtainable...
Compact diode models normally available in commercial simulators like Spectre or HSPICE do not scale the series resistance with P-N distance. The standard diode models scale with drawn area, assuming the current is vertical. However the diodes used for ESD protection in CMOS are operating as lateral diodes, so the resistance should scale with width, not area. This is a serious problem for circuit...
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