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This research investigates the electro-thermal switching characteristics and lattice temperature profile of a two dimensional (2D) silicon carbide (4H-SiC polytype) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) cell under resistive switching using Silvaco ATLAS Technology Computer Aided Design (TCAD) physics based simulation software. Physics based models were included to account for...
In this paper, for the first time, large area SiC BJTs were fabricated on SiC wafers with reduced Basal Plane Dislocations (BPDs). We have demonstrated: (1) stable performance on 1200 V, 20 A SiC BJTs after long duration of electrical stress at different current densities up to 150 A/cm2; (2) a blocking yield of >80% with low leakage current (<20 nA at 1800 V) on 3" wafers along with current...
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